UNR32A3 |
RFQ for UNR32A3 Required Field |
 |
| Technical/Catalog Information | UNR32A3G0L |
| Vendor | Panasonic - SSG (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Pre-Biased |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 80mA |
| Power - Max | 100mW |
| Resistor - Base (R1) (Ohms) | 47K |
| Resistor - Emitter Base (R2) (Ohms) | 47K |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300A, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | 150MHz |
| Mounting Type | Surface Mount |
| Package / Case | SSS Mini 3P |
| Packaging | Digi-Reel? |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | UNR32A3G0L UNR32A3G0L UNR32A3G0LDKR ND UNR32A3G0LDKRND UNR32A3G0LDKR |
| Product | Manufacturers | Pack | D/C |
| UNR32A3 | - | SOD-423 | - |
Features |
| • Suitable for high-density mounting and downsizing of the equipment• Contribute to low power consumption |
|
Parameter |
Rating |
SYMBOL |
UNIT |
|
Collector-base voltage |
50 |
VCBO |
V |
|
Collector-emitter voltage |
50 |
VCEO |
V |
|
Collector current |
80 |
IC |
mA |
|
Total power dissipation |
100 |
P |
mW |
|
Junction temperature |
125 |
Tj |
°C |
|
Storage temperature |
−55 to +125 |
Tstg |
°C |
